Processes for monitoring the levels of oxygen and/or...

Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching

Reexamination Certificate

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C438S710000, C438S714000, C438S725000

Reexamination Certificate

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07381651

ABSTRACT:
Processes for monitoring the levels of oxygen and/or nitrogen in a substantially oxygen and nitrogen-free plasma ashing process generally includes monitoring the plasma using optical emission. An effect produced by the low levels of oxygen and/or nitrogen species present on other species generally abundant in the plasma is monitored and correlated to amounts of oxygen and nitrogen present in the plasma. This so-called “effect detection” process monitors perturbations in the spectra specifically associated with species other than nitrogen and/or oxygen due to the presence of trace amounts of oxygen and/or nitrogen species and is used to quantitatively determine the amount of oxygen and/or nitrogen at a sensitivity on the order of 1 part per million and potentially 1 part per billion.

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patent: 2005/0019964 (2005-01-01), Chang et al.

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