Processes for hermetically packaging wafer level microscopic...

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Thermally responsive

Reexamination Certificate

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C438S051000, C438S125000, C438S126000

Reexamination Certificate

active

06936494

ABSTRACT:
A process for hermetically packaging a microscopic structure including a MEMS device is provided. The process for the present invention includes the steps of depositing a capping layer of sacrificial material patterned by lithography over the microscopic structure supported on a substrate, depositing a support layer of a dielectric material patterned by lithography over the capping layer, providing a plurality of vias through the support layer by lithography, removing the capping layer via wet etching to leave the support layer intact in the form of a shell having a cavity occupied by the microscopic structure, depositing a metal layer over the capping layer that is thick enough to provide a barrier against gas permeation, but thin enough to leave the vias open, and selectively applying under high vacuum a laser beam to the metal proximate each via for a sufficient period of time to melt the metal for sealing the via.

REFERENCES:
patent: 6454160 (2002-09-01), Gueissaz
patent: 6470594 (2002-10-01), Boroson et al.
Y.T. Cheng et al.; Vacuum Packaging Technology Using Localized Aluminum/Silicon-to-Glass Bonding; Center for Wireless Integrated Microsystems; University of Michigan; IEEE 0-7803-5998-Apr. 2001; 2001 (pp. 18-21).
C. Yu et al.; Antireflection Coatings for Advanced Semiconductor Device Metallization Using Laser Reflow and Chemical Mechanical Planarization; Appl. Phys. Lett. 59 (16), Oct. 14, 1991 (pp. 1978-1980).
Ruichen Liu, K. P. Cheung, and W. Y.-C. Lai; A Study of Pulsed Laser Planarization of Aluminum for VLSI Metallization; AT&T Bell Laboratories; 1989 VMIC Conference Jun. 12-13/89; 1989 IEEE TH-0259-2/89/0000-0329 (pp. 329-335).
B. Woratschek et al.; Improved Excimer Laser Planarization of AISI with Addition of Ti or Cu; Siemens AG; 1989 VMIC Conference Jun. 12-13/89; 1989 IEEE TH-0259-2/89/0000-0309 (pp. 309-314).

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