Processes for deposition of thin films of crystalline silicon on

Coating processes – Electrical product produced – Condenser or capacitor

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148171, 148172, 156605, 156608, 156622, 427 86, H01L 2136

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042333385

ABSTRACT:
Processes for the continuous deposition of crystalline silicon on graphite substrates, the silicon being undoped or N- or P-doped and the substrates being useful for photovoltaic cells and other electronic devices, the processes comprising placing crystalline silicon in at least one crucible having a capillary port with a vertical axis in its lower part; bringing the silicon to its melting point; bringing a graphite substrate into contact with the pendant drop formed at the lower mouth of the capillary; moving the substrate at a selected speed in a constant predetermined direction; and removing the substrate coated with the crystalline substance at chosen time intervals.

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patent: 4077818 (1978-03-01), Chu
patent: 4090851 (1978-05-01), Berkman et al.
patent: 4099924 (1978-07-01), Berkman et al.
patent: 4119744 (1978-10-01), Brissoh et al.
patent: 4124411 (1978-11-01), Meuleman et al.
Belouet C. et al., "Growth of Polycrystalline Silicon Layers on Carbon Substrates for Application as Solar Cells", pp. 191-198, of the Colloquium concerning Solar Energy at Toulouse, France, 1976.

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