Process window-based correction for photolithography masks

Details Process window-based correction for photolithography masks Process window-based correction for photolithography masks

2004-10-29

2008-12-30

Young, Christopher G (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Including control feature responsive to a test or measurement

C430S005000, C716S030000

Reexamination Certificate

active

07470492

ABSTRACT:
A correction for photolithography masks used in semiconductor and micro electromechanical systems is described. The correction is based on process windows. In one example, the invention includes evaluating a segment of an idealized photolithography mask at a plurality of different possible process variable values to estimate a corresponding plurality of different photoresist edge positions, comparing the estimated edge positions to a minimum critical dimension, and moving the segment on the idealized photolithography mask if the estimated edge positions do not satisfy the minimum critical dimension.

REFERENCES:
patent: 7266801 (2007-09-01), Kotani et al.
patent: 7350181 (2008-03-01), Tanaka et al.
patent: 2008/0044748 (2008-02-01), Han et al.

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