Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Bidirectional rectifier with control electrode
Reexamination Certificate
2011-04-26
2011-04-26
Pham, Thanh V (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Bidirectional rectifier with control electrode
C257S046000, C257S105000, C257S570000, C257S910000, C257SE29195
Reexamination Certificate
active
07932537
ABSTRACT:
Process variation-tolerant diodes and diode-connected thin film transistors (TFTs), printed or patterned structures (e.g., circuitry) containing such diodes and TFTs, methods of making the same, and applications of the same for identification tags and sensors are disclosed. A patterned structure comprising a complementary pair of diodes or diode-connected TFTs in series can stabilize the threshold voltage (Vt) of a diode manufactured using printing or laser writing techniques. The present invention advantageously utilizes the separation between the Vtof an NMOS TFT (Vtn) and the Vtof a PMOS TFT (Vtp) to establish and/or improve stability of a forward voltage drop across a printed or laser-written diode. Further applications of the present invention relate to reference voltage generators, voltage clamp circuits, methods of controlling voltages on related or differential signal transmission lines, and RFID and EAS tags and sensors.
REFERENCES:
patent: 3369159 (1968-02-01), Sihvonen et al.
patent: 4607274 (1986-08-01), Yoshitake
patent: 5469106 (1995-11-01), Dow
patent: 5521601 (1996-05-01), Kandlur et al.
patent: 5550547 (1996-08-01), Chan et al.
patent: 5754074 (1998-05-01), Kelly
patent: 2004/0173867 (2004-09-01), Beigel
patent: 2005/0008880 (2005-01-01), Kunze et al.
patent: 2005/0174845 (2005-08-01), Koyama et al.
patent: 59-201459 (1984-11-01), None
Kamuro Setsushi; “Complementary Metal Oxide Semiconductor Field Effect Transistor Integrated Circuit”; Patent Abstracts of Japan; Publication No. JP59201459 (A); Publication Date: Nov. 15, 1984; Japan Patent Office, Japan.
Korean Office Action with English Translation; Dated Sep. 25, 2009; Korean Patent Application No. 10-2006-0115817; 8 pgs. total; Korean Intellectual Property Office, Republic of Korea.
Smith Patrick
Subramanian Vivek
Fortney Andrew D.
Kovio Inc.
Pham Thanh V
The Law Offices of Andrew D. Fortney
LandOfFree
Process-variation tolerant diode, standard cells including... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Process-variation tolerant diode, standard cells including..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process-variation tolerant diode, standard cells including... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2705696