Coating processes – Electrical product produced – Condenser or capacitor
Patent
1985-10-01
1987-03-17
Smith, John D.
Coating processes
Electrical product produced
Condenser or capacitor
427 93, 427 99, 427 91, H01L 21285
Patent
active
046506969
ABSTRACT:
A process is provided for making semiconductor devices with refractory metal metallization layers in place of aluminum metallization layers. An insulative layer is deposited onto a silicon substrate and a pattern is formed in the insulative layer. Prior to deposition of the metallization layer onto the patterned insulative layer, a layer of polycrystalline silicon is deposited onto the patterned insulative layer by means of a low pressure chemical vapor deposition process. The polycrystalline silicon is deposited to a thickness of preferably 700-800 Angstroms. After deposition of the polycrystalline silicon layer, refractory metal is deposited by means of a low pressure chemical vapor deposition process. Preferably, the refractory metal is deposited to a thickness of one micrometer at a temperature of 300.degree.-600.degree. C. depending on the desired deposition rate. The refractory metal vapor deposition process etches away 300-400 Angstroms of the polysilicon layer, thereby leaving 300-400 Angstroms of polysilicon for the purpose of adhering the insulative layer to the refractory metal layer. The composite is then heat treated to reduce the vertical resistivity due to the pressure of the high resistance polycrystalline silicon layer.
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Harris Corporation
Smith John D.
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