Process using oxide supporter for manufacturing a capacitor...

Semiconductor device manufacturing: process – Making passive device – Stacked capacitor

Reexamination Certificate

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C438S253000, C438S381000, C438S700000, C257SE21011, C257SE21646, C257SE21651

Reexamination Certificate

active

08003480

ABSTRACT:
A process using oxide supporter for manufacturing a capacitor lower electrode of a micron stacked DRAM is disclosed. First, form a stacked structure. Second, form a photoresist layer on an upper oxide layer and then etch them. Third, deposit a polysilicon layer onto the upper oxide layer and the nitride layer. Fourth, deposit a nitrogen oxide layer on the polysilicon layer and the upper oxide layer. Sixth, partially etch the nitrogen oxide layer, the polysilicon layer and the upper oxide layer to form a plurality of vias. Seventh, oxidize the polysilicon layer to form a plurality of silicon dioxides surround the vias. Eighth, etch the nitride layer, the dielectric layer and the lower oxide layer beneath the vias. Ninth, form a metal plate and a capacitor lower electrode in each of the vias. Tenth, etch the nitrogen oxide layer, the polysilicon layer, the nitride layer and the dielectric layer.

REFERENCES:
patent: 7666797 (2010-02-01), Shea et al.
patent: 2007/0098892 (2007-05-01), Chung et al.

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