Active solid-state devices (e.g. – transistors – solid-state diode – Voltage variable capacitance device – With specified dopant profile
Patent
1995-04-12
1996-09-17
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Voltage variable capacitance device
With specified dopant profile
257595, 257615, 257657, H01L 2993
Patent
active
055571409
ABSTRACT:
A doping profile is disclosed for realizing a varactor diode that exhibits a high breakdown voltage V.sub.BR, e.g.,>100 volts, and a capacitance which has a bi-level characteristic. In particular, the capacitance has a C.sub.max level and a C.sub.min level. The doping profile includes two lightly doped regions and, between them, a third region with higher doping. The doping concentrations and widths of the first two regions substantially set the tuning ratio of C.sub.max /C.sub.min, and the doping concentration and width of the third region substantially sets the transition voltage V.sub.TR between the bi-level capacitances.
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Norwood, Marcus H., et al., Voltage Variable Capacitor Tuning: A Review, Proceedings of the IEEE, vol. 56, No. 5, May, 1968.
Bogart, Theodore F., Electronic Devices and Circuits, MacMillan Publishing Company, New York, 1993, pp. 891-893.
Singh, Jasprit., Semiconductor Devices, McGraw-Hill, Inc., New York, 1994, pp. 192-208.
Sze, S. M., High-Speed Semiconductor Devices, Wiley-Interscience Publications, New York, 1990, pp. 539-544.
Case Michael G.
Hooper William W.
Narayanan Authi A.
Nguyen Chanh M.
Denson-Low W. K.
Duraiswamy V. D.
Hughes Aircraft Company
Ngo Ngan V.
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