Process to reduce localized polish stop erosion

Details Process to reduce localized polish stop erosion Process to reduce localized polish stop erosion

1998-01-15

2000-09-05

Utech, Benjamin L.

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

438693, H01L 21302, H01L 21461

Patent

active

061142484

ABSTRACT:
A process for reducing polish stop erosion includes using a slurry of particles and an alkaline solution. The slurry for reducing polish stop erosion has a reduced solids content, finer particle size, and an increased chemical component. The pH of the slurry is between about 9.5 and 10.5.

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Greg C. Lee et al., "An In-Depth Characterization of Dishing and Erosion During Tungsten CMP", San Jose State University, Jun. 10-12, 1997, VMIC Conference, 1997 ISMIC--107/97/0304(c), pp. 304-306.
Matthew Rutten et al., "Pattern Density Effect in Tungsten CMP", Semiconductor International, pp. 123-128, Sep. 1995.

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