Process to reduce defect formation occurring during shallow tren

Details Process to reduce defect formation occurring during shallow tren Process to reduce defect formation occurring during shallow tren

1999-01-04

2000-03-14

Fahmy, Wael

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

438436, 438437, H01L 2176

Patent

active

060372389

ABSTRACT:
A process for creating an insulator filled, shallow trench isolation region, in a semiconductor substrate, has been developed. The process features the use of a high temperature hydrogen anneal, performed after an anisotropic RIE procedure, used to create the shallow trench shape, in the semiconductor substrate. The high temperature hydrogen anneal procedure repairs defects in the semiconductor substrate, created by the shallow trench, RIE procedure, and also creates a denuded zone, at or near the shallow trench shape, exposed silicon surface. The defect free denuded zone allows the formation of a uniform insulator trench liner to be realized, and also allows a minimum of junction leakage to occur at the region in which a source/drain-substrate junction, is butted against the side of the insulator filled, shallow trench.

REFERENCES:
patent: 4571819 (1986-02-01), Rogers et al.
patent: 4952524 (1990-08-01), Lee et al.
patent: 5420454 (1995-05-01), Vook et al.
patent: 5447884 (1995-09-01), Fahey et al.
patent: 5492858 (1996-02-01), Bose et al.
patent: 5604149 (1997-02-01), Paoli et al.
patent: 5641704 (1997-06-01), Paoli et al.
patent: 5643823 (1997-07-01), Ho et al.
patent: 5705417 (1998-01-01), Tseng
patent: 5780346 (1998-07-01), Arghavani et al.
patent: 5792684 (1998-08-01), Lee et al.
patent: 5801083 (1998-09-01), Yu et al.
patent: 5882983 (1999-03-01), Gardner et al.
T. Sato, et al., "Trench Transformation Technology . . . Thin Dielectric Films", 1998 Symposium on VLSI Technology Digest of Technical Papers, pp. 206-207, 1998.

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