Process to prepare an array of wires with submicron diameters

Details Process to prepare an array of wires with submicron diameters Process to prepare an array of wires with submicron diameters

1998-10-05

2000-12-12

Elms, Richard

Semiconductor device manufacturing: process

Forming schottky junction

Using refractory group metal

438962, 117921, 174105SC, H01L 2128, C30B 2900, C30B 2962, H01B 718, H01B 902

Patent

active

061598313

ABSTRACT:
A method is disclosed for forming an array of submicron-sized wires in a host body. In the method, the vapor of a metal, such as bismuth, is caused to flow upward through a horizontal refractory plate having many through holes, 200 nanometers or less in diameter, until all foreign material is excluded from the holes and then the plate is cooled from the top side to progressively and simultaneously condense said vapor to form said wires in the holes.

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Whitney et al., "Fabrication and Magnetic Properties of Arrays of Metallic Nanowires", Science, vol. 261, pp. 1316-1319.
Routkevitch et al., "Nonlithographic Nano-Wire Arrays: Fabrication, Physics, and Device Applications", IEEE Transactions on Electron Devices, vol. 43, pp. 1646-1658.

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