Process to manufacture a vertical gate-enhanced bipolar transist

Details Process to manufacture a vertical gate-enhanced bipolar transist Process to manufacture a vertical gate-enhanced bipolar transist

1997-10-06

1998-07-07

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

438133, 438135, 438137, H01L 21265

Patent

active

057768137

ABSTRACT:
A process for manufacturing a vertical gate-enhanced bipolar transistor is described. The process does not require the presence of an insulating substrate to electrically isolate devices and is suitable for both NPN as well as PNP bipolar transistors. The process begins with the formation of a buried layer. This layer is accessed from the surface through a suitable well region. Then a trench, shaped as a hollow square is formed, lined with a layer of gate oxide and then filled with low resistivity polysilicon to form the gate. A polysilicon emitter layer is formed in the interior of the square, following implantation of arsenic ions with thermal drive-in to form an emitter junction just below the surface. After formation of the emitter junction, isolation layers, including self-aligned spacers, are constructed to cover the polysilicon emitter layer. Another layer of polysilicon is then laid down and then boron ions are implanted. This is followed by a thermal drive-in to form a base contact. The polysilicon is then patterned and etched to serve as the base electrode. A layer of oxide is laid down and flowed to provide planarization/insulation and contact holes are etched in it. Finally, a metallic layer is laid down and etched to form circuit wiring. With the help of the vertical polysilicon gate, emitter current injection is enhanced so that current gain is increased relative to a conventional bipolar device.

REFERENCES:
patent: 5227653 (1993-07-01), Sin
patent: 5304821 (1994-04-01), Hagino et al.
patent: 5380670 (1995-01-01), Hagino et al.
patent: 5397912 (1995-03-01), Sundaram
patent: 5430318 (1995-07-01), Hsu
patent: 5637889 (1997-06-01), Groover et al.

Affiliated with

Also associated with

Rating

Process to manufacture a vertical gate-enhanced bipolar transist does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process to manufacture a vertical gate-enhanced bipolar transist, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process to manufacture a vertical gate-enhanced bipolar transist will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1205240