Process simulation method, process simulator and chemical vapor

Details Process simulation method, process simulator and chemical vapor Process simulation method, process simulator and chemical vapor

1994-11-29

1996-12-31

Trammell, James P.

Boots, shoes, and leggings

364578, G06F 1700

Patent

active

055900518

ABSTRACT:
A process simulation method and a process simulator are disclosed wherein a simulation for optimum process conditions for formation of a dielectric film for a capacitor by a chemical vapor deposition method is executed using a non-empirical reaction model. The process simulator comprises an inputting apparatus for inputting parameters required to determine optimum process conditions, which provide the best step coverage for a dielectric film of a capacitor to be formed, as values defining given variation ranges, a storage apparatus for storing vapor phase reactions and film surface reactions individually corresponding to process condition sets each of which is a combination of a plurality of parameters as models obtained by a non-empirical method in advance, a simulation condition setting apparatus for setting process condition sets, a reaction model setting apparatus for recalling models from the storage apparatus in response to the thus set process condition sets, and a simulation execution apparatus for executing simulations in accordance with the thus recalled models and comparing results of the simulations with each other to select optimum process conditions.

REFERENCES:
patent: 5067101 (1991-11-01), Kunikiyo et al.
patent: 5070469 (1991-12-01), Kunikiyo et al.
patent: 5307296 (1994-04-01), Uchida et al.
patent: 5481475 (1996-01-01), Young
Ikegawa et al.; "Deposition Profile Simulation Using the Direct Simulation Monte Carlo Method"; J. Electrochem. Soc., vol. 136, No. 10, Oct. 1989, pp. 2982-2986.

Affiliated with

Also associated with

Rating

Process simulation method, process simulator and chemical vapor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process simulation method, process simulator and chemical vapor , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process simulation method, process simulator and chemical vapor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1146564