Process protection for individual device gates on large area MIS

Details Process protection for individual device gates on large area MIS Process protection for individual device gates on large area MIS

1982-04-19

1984-06-26

Hearn, Brian E.

Metal working

Method of mechanical manufacture

Assembling or joining

29577C, 29580, H01L 2190

Patent

active

044557396

ABSTRACT:
Gates of individual devices on a slice are connected through a resistance to the device substrate, and through the same resistance to other device gates. This interconnection and high-resistance drain gives the gate protection from static charge buildup and subsequent catastrophic discharge which would result in a faulty device. This method protects each gate from the time of deposition to final device packaging.

REFERENCES:
patent: 3590340 (1971-06-01), Kubo et al.
patent: 3967295 (1976-06-01), Stewart
patent: 4037140 (1977-07-01), Eatow, Jr.
patent: 4202001 (1980-05-01), Reichert et al.
patent: 4282556 (1981-08-01), Ipri
RCA Application Note ICAN-6218; Gate-Oxide Protection Circuit in RCA COS/MOS . . . , by R. R. Painter.
Proper Shielding Protects ICs from Electrostatic Damage, Electronics, Jul. 14, 1982, pp. 142-146, by James R. Huntsman.
Vertical MOSFET has Diode Protection; Electronics, Oct. 6, 1982, by Charles Cohn.

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