Process of vapor phase epitaxy of compound semiconductors

Details Process of vapor phase epitaxy of compound semiconductors Process of vapor phase epitaxy of compound semiconductors

1983-10-17

1985-08-06

Saba, William G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29576E, 148174, 148DIG56, 148DIG110, 156612, 156614, 156DIG70, 427 87, 118720, 118725, 118730, H01L 21205, H01L 21365

Patent

active

045334102

ABSTRACT:
A layer of a compound semiconductor having good quality is formed by disposing a substrate in an epitaxial growth layer, feeding a second reactant gas through a guide member extending from the downstream side to the upstream side of the flow of a first reactant gas, mixing the first reactant gas and second reactant gas, and supplying the resultant gaseous mixture of the first and second reactant gases onto the substrate.

REFERENCES:
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patent: 3635771 (1972-01-01), Shaw
patent: 3925119 (1975-12-01), Philbrick et al.
patent: 4007074 (1977-02-01), Ogirima et al.
patent: 4116733 (1978-09-01), Olsen et al.
patent: 4220488 (1980-09-01), Duchemin et al.
patent: 4404265 (1983-09-01), Manasevit
Seki et al., "New Vapor Growth Method for GaP . . . ", Japan. J. _Appl. Phys., vol. 12, (1973), No. 7, pp. 1112-1113.

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