Coating apparatus – Gas or vapor deposition – Multizone chamber
Patent
1988-01-26
1990-03-27
Bueker, Richard
Coating apparatus
Gas or vapor deposition
Multizone chamber
118715, 118725, 156613, C23C 1600
Patent
active
049111027
ABSTRACT:
A process and apparatus, whereby in the process of vapor growth of a gallium nitride group semiconductor (Al.sub.x Ga.sub.1-x N; inclusive of x=0) thin film using an organometallic compound gas, a reactant gas which grows Al.sub.x Ga.sub.1-x N and a reactant gas containing a doping element are separately introduced near to a susceptor and mixed in the vicinity of a substrate held by the susceptor to grow an I-type Al.sub.x Ga.sub.1-x N thin film, are disclosed. Also, a process of vapor growth and apparatus having a mixing tube and a process and apparatus for inclining the susceptor relative to the reactant gas flow are disclosed. Moreover, a process and apparatus, whereby the Al.sub.x Ga.sub.1-x N thin film is subjected to the crystal growth using a plasma of the reactant gas under reduced pressure, under the irradiation of ultraviolet rays or laser beams, are disclosed.
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Akazaki Isamu
Amano Hiroshi
Hiramatsu Kazumasa
Manabe Katsuhide
Okazaki Nobuo
Bueker Richard
Nagoya University
Toyoda Gosei Co,., Ltd.
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