Fishing – trapping – and vermin destroying
Patent
1987-05-18
1988-09-20
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437246, 437192, 437247, 437174, 148DIG19, 357 71, H01L 21283
Patent
active
047725710
ABSTRACT:
In order to prevent diffusion of silicon from under a titanium disilicide interconnect (1) and into an overlying aluminium layer (6), the disilicide is selectively nitrided by annealing in nitrogen at the points where interconnection between the disilicide and aluminium is required via holes (4) in a silicon dioxide layer (3). The titanium nitrode contacts (5) thus formed in a truly self-aligned manner provide a good barrier to silicon diffusion while having an acceptable low resistivity.
REFERENCES:
patent: 4468308 (1984-08-01), Scovell et al.
patent: 4528744 (1985-07-01), Shibata
patent: 4545116 (1985-10-01), Law
patent: 4567058 (1986-01-01), Koh
patent: 4599196 (1986-05-01), Anderson
patent: 4622735 (1986-11-01), Shibata
C. Y. Ting and M. Wittmer, Thin Solid Films, 96 (1982), pp. 327-345.
M. A. Nicollet, Thin Solid Films, 52 (1978), pp. 415-445.
C. Y. Ting, J. Vac. Sci. Technol., 21 (1), May/Jun. 1982, pp. 14-18.
P. J. Rossez, G. J. Tomkins, "Self Aligned Nitridation of TiSi.sub.2 : a TiN/TiSi.sub.2 Contact Structure", Materials Res. Soc. Symp. Proc., vol. 37 (Gibson et al. ed.), pp. 607-612, 1985, Mat. Res. Soc.
Rosser Paul J.
Scovell Peter D.
Tomkins Gary J.
Clarke Dennis P.
Hearn Brian E.
Quach T. N.
STC PLC
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