Process of removing polymers in semiconductor vias

Details Process of removing polymers in semiconductor vias Process of removing polymers in semiconductor vias

1994-02-03

1995-05-09

Arbes, Carl J.

Metal working

Method of mechanical manufacture

Electrical device making

437164, H01L 2100

Patent

active

054128684

ABSTRACT:
A method for forming a contact via in an integrated circuit includes the formation of an aluminum conductive element on an integrated circuit device. A conformal insulating layer is then deposited over the device. Using a masking layer, an anisotropic etch is performed to open a via through the conformal insulating layer. During the anisotropic etch, polymers are created from the resist and etch chemistry and adhere to the sidewalls of the via. A resist developer containing tetramethylammonium hydroxide (TMAX) is used to remove the polymers from the via. A contact may now be formed by depositing conductive material into the via.

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