Process of removing polymers in semiconductor vias

Details Process of removing polymers in semiconductor vias Process of removing polymers in semiconductor vias

1995-01-12

1997-01-28

Thomas, Laura

Electricity: conductors and insulators

Conduits, cables or conductors

Preformed panel circuit arrangement

174262, 174250, H05K 100

Patent

active

055979831

ABSTRACT:
A method for forming a contact via in an integrated circuit includes the formation of an aluminum conductive element on an integrated circuit device. A conformal insulating layer is then deposited over the device. Using a masking layer, an anisotropic etch is performed to open a via through the conformal insulating layer. During the anisotropic etch, polymers are created from the resist and etch chemistry and adhere to the sidewalls of the via. A resist developer containing Tetra Methyl Amonium Hydroxide is used to remove the polymers from the via. A contact may now be formed by depositing conductive material into the via.

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