Process of reducing density of fast surface states in MOS device

Details Process of reducing density of fast surface states in MOS device Process of reducing density of fast surface states in MOS device

1980-07-22

1982-05-25

Smith, John D.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

357 24, 427 39, 427 95, H01L 21324, H01L 21318

Patent

active

043317090

ABSTRACT:
Fast surface states in MOS devices, such as SCCDs, are reduced by depositing a relatively thin amorphous layer containing silicon and hydrogen onto the SiO.sub.2 surface of such devices and annealing the resultant device in a non-oxidizing atmosphere for brief periods of time at a temperature in excess of the deposition temperature for the amorphous layer but below about 500.degree. C. so that free valences at the Si-SiO.sub.2 interface region are saturated with hydrogen. Surface state densities of about 4.times.10.sup.8 cm.sup.-2 eV.sup.-1 and SCCDs having .epsilon.=1.10.sup.-5 can be achieved via this process. The process is useful in producing SCCDs with low surface state densities and other MOS devices having low surface generated dark currents.

REFERENCES:
patent: 4113514 (1978-09-01), Pankove et al.
patent: 4181751 (1980-01-01), Hall et al.
C. H. Sequin et al., "Charge Transfer Devices", 1975, pp. 11-12.
B. E. Deal, "The Current Understanding of Charges in the Thermally Oxidized Silicon Structure", J. Electrochem. Soc., vol. 121, No. 6, 1974, pp. 198C-205C.
Matysik et al., "Hydrogen Evolution from Plasma-Deposited Amorphous Silicon Films" J. Vac. Sci. Technol. 15(2) Mar./Apr. 1976.
Malhotra et al., "Effects of Hydrogen Contamination on the Localized States in Amorphous Silicon" Applied Physics Letters, vol. 28, No. 1, 1 Jan. 1976.

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