Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Patent
1995-05-11
1998-05-26
Trinh, Michael
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
438149, 438158, 438787, H01L 2100
Patent
active
057563713
ABSTRACT:
A process of manufacture has the steps of forming a metal film on the insulating substrate, applying photoresist on the metal film, exposing the photoresist to light to form a photoresist pattern by developing, etching the metal film with the photoresist pattern as an etching mask, forming an insulating film on the insulating substrate by making the insulating substrate with the photoresist pattern contact a liquid-phase deposition treatment liquid, and removing the photoresist pattern or the combination of the photoresist pattern and the insulating film thereon. Through these steps, the metal film for use as the metal wiring to effect contact with the electrode of the TFT is buried in the surface of the insulating substrate. Consequently, the resistance of the metal wiring can greatly be reduced. Thereby, it is produced a thin film transistor capable of rendering an large area, large capacity display possible and free from a difference in level.
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Kusuda Yukihisa
Ohno Seiji
Nippon Sheet Glass Co. Ltd.
Trinh Michael
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