Process of producing thick layers of silicon dioxide

Details Process of producing thick layers of silicon dioxide Process of producing thick layers of silicon dioxide

1985-07-03

1986-08-05

Childs, Sadie L.

Coating processes

Coating by vapor, gas, or smoke

Base includes an inorganic compound containing silicon or...

427 93, 427 96, 4272554, 427314, 427315, 427343, C23C 1640

Patent

active

046043047

ABSTRACT:
An improvement in the formation of thick, i.e. 1,200 nanometers and greater, layers of silicon dioxide on a substrate is provided. The silicon dioxide layer is provided by the alternate deposition and oxidation of thin layers of silicon. In comparison to conventional oxidation, the time required for formation of a thick layer of silicon dioxide in accordance with the disclosed process is substantially reduced.

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Bloem, "Nucleation of Silicon on Amorphous and Crystalline Substrates", 1979 pp. 41-58.

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