Process of producing silicon wafer

Details Process of producing silicon wafer Process of producing silicon wafer

2007-11-06

2007-11-06

Hiteshew, Felisa (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

C117S019000, C117S089000

Reexamination Certificate

active

11206855

ABSTRACT:
A silicon wafer made by the Czochralski method, including a ring-shaped OSF region and having nitrogen concentration ranging from 2.9×1014to 5.0×1015atoms/cm3and oxygen concentration of 1.27×1018to 3.0×1018atoms/cm3is heat-treated in a reducing-gas or inert-gas atmosphere, by increasing the temperature at the rate of 0.5° C./min to 2.0° C./min until the wafer is heated to a heat-treatment temperature of 1000 to 1200° C.

REFERENCES:
patent: 7048796 (2006-05-01), Watanabe et al.
patent: 0 942 078 (1999-09-01), None
patent: 1 391 921 (2004-02-01), None
patent: 11-322491 (1999-11-01), None
patent: 2001-284362 (2001-10-01), None

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