Process of producing semiconductor thermally sensitive switching

Details Process of producing semiconductor thermally sensitive switching Process of producing semiconductor thermally sensitive switching

1978-07-14

1979-04-24

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

357 28, 357 38, 357 91, H01L 21265, H01L 2356

Patent

active

041510119

ABSTRACT:
A planar pnpn thyristor structure is prepared to include an SiO.sub.2 film with a thickness of about 10,000A wholly disposed on its main face to which pn junctions are exposed. That portion of the SiO.sub.2 film underlaid with an exposed edge of a collector junction and its adjacent portion are replaced by another SiO.sub.2 film about 1,000A thick. Then argon ions Ar.sup.+ with an implantation energy of 200 KeV are implanted into the thyristor structure through both films to permit a low lifetime region including a large number of lattice defects to be formed only in its main face portion overlaid with the thin SiO.sub.2 film resulting in a semiconductor thermally sensitive switching element effecting the switchover at a sufficiently low temperature.

REFERENCES:
patent: 3929512 (1975-12-01), Nicholas et al.
patent: 4081818 (1978-03-01), Nakata
patent: 4117505 (1978-09-01), Nakata
Oonishi et al., "T-Characteristics of the Thyristor . . ." Trans. Soc. Instr. & Control Engg. (Japan), 10 (1974) 507.

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