Process of producing semiconductor planar device

Details Process of producing semiconductor planar device Process of producing semiconductor planar device

1975-01-20

1976-01-20

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29576, H01L 21322

Patent

active

039335410

ABSTRACT:
A silicon dioxide film and a silicon nitride film are successively vapor-deposited on a main face of an N type silicon substrate processed with H.sub.2 O.sub.2 water. Those portions of both films underlaid by a P type region to be subsequently formed and their peripheral portions are selectively removed. Then a P type impurity is diffused into the central exposed portion of the main substrate face to form the P type region with a PN junction having a termination facing the silicon dioxide film. Also a silicon dioxide film is thermally formed on the peripheral exposed portion of the main face.

REFERENCES:
patent: 3281915 (1966-11-01), Schramm
patent: 3477886 (1969-11-01), Ehlenberger
patent: 3597667 (1971-08-01), Horn
patent: 3696276 (1972-10-01), Boland
patent: 3717514 (1973-02-01), Burgess

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