Process of producing semiconductor laser device

Details Process of producing semiconductor laser device Process of producing semiconductor laser device

1974-10-17

1976-06-08

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148172, 148175, 148 335, 331 945H, 252 623GA, 357 16, 357 18, H01L 736, H01L 738

Patent

active

039619966

ABSTRACT:
N type Ga.sub.0.7 Al.sub.0.3 As, N type GaAs, N type Ga.sub.0.7 Al.sub.0.3 As and P type Ga.sub.1-0.3 Al.sub.0.3 As are epitaxially grown on an N type GaAs substrate in the named order one after another to form superposed layers. A selected portion of the uppermost layer is etched away along with those portions of the following two layers and one part of the lowermost layer located below the selected uppermost layer portion. P type Ga.sub.1-0.3 Al.sub.0.3 As highly doped with zinc is epitaxially grown to fill the removed portions of the layers. Then the zinc is diffused into the adjacent portions of the layers to form a radiative recombination region of a layer on that portion of the GaAs layer converted to the P type.

REFERENCES:
patent: 3604991 (1971-09-01), Yonezu et al.
patent: 3691476 (1972-09-01), Hayashi
patent: 3747016 (1973-07-01), Kressel et al.
patent: 3758875 (1973-09-01), Hayashi
patent: 3824493 (1974-07-01), Hakki
patent: 3849790 (1974-11-01), Gottsmann et al.
patent: 3855607 (1974-12-01), Kressel et al.
Blum et al., "Double Heterojunction Laser Arrays," I.B.M. Technical Disclosure Bulletin, vol. 15, No. 7, Dec. 1972, p. 2345.

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