Process of producing multicrystalline silicon substrate and...

Details Process of producing multicrystalline silicon substrate and... Process of producing multicrystalline silicon substrate and...

2007-02-13

2007-02-13

Hiteshew, Felisa (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Havin growth from molten state

C117S083000

Reexamination Certificate

active

10505979

ABSTRACT:
There is provided a process of producing a multicrystalline silicon substrate having excellent characteristics as a solar cell substrate. A multicrystalline silicon ingot made by directional solidification10is cut such that a normal line of a principal surface14of a multicrystalline silicon substrate13is substantially perpendicular to a longitudinal direction of crystal grains11of the multicrystalline silicon ingot made by directional solidification10.

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Derwent WPI, WPI Acc. No. 1988-232193/198833, abstract of JP 63-166711, Jul. 1988.

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