Process of producing insulated-gate bipolar transistor

Details Process of producing insulated-gate bipolar transistor Process of producing insulated-gate bipolar transistor

1995-06-19

1997-04-29

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Making regenerative-type switching device

Having field effect structure

438589, H01L 21331

Patent

active

056248555

ABSTRACT:
An insulated-gate bipolar transistor includes a semiconductor region of a first conductive type; a base layer of a second conductive type diffused from a surface of the semiconductor region; a source layer of the first conductive type diffused in a surface portion of the base layer; an insulated gate buried in a recess dug from the surface of the source layer through the base layer up to the semiconductor region; a collector layer of the second conductive type diffused from a surface of the semiconductor region on an opposite side of the insulated gate with respect to the source layer; an emitter terminal drawn from the base layer and the source layer; a collector terminal drawn from the collector layer; and a gate terminal drawn from the insulated gate.

REFERENCES:
patent: 5082795 (1992-01-01), Temple
patent: 5155562 (1992-10-01), Tsuchiya
patent: 5198688 (1993-03-01), Tsuchiya et al.
patent: 5227653 (1993-07-01), Sin
patent: 5329142 (1994-07-01), Kitagawa et al.
patent: 5349224 (1994-09-01), Gilbert et al.
P.V. Gilbert et al., Proc. 5th. Int'l. Symp. Power Semic. Devices and IC's (ISPSD '93), May 18-20, 1993, p. 240, "A fully intergrable IGBT with a trench gate structure" (Abstract) May 1993.
B.-H. Lee et al., Jpn. J. Appl. Phys., 34 (2B) (1995) 854, "A trench-gate SOI lateral IGBT with p+ cathode well" Feb. 1995.
"Performance of 200 V CMOS Compatible Auxiliary Cathode Lateral Insulated Gate Transistors", Narayanan et al., IEEE, pp. 103-108, 1991.

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