Chemistry: electrical and wave energy – Processes and products – Electrostatic field or electrical discharge
Patent
1984-12-20
1986-11-11
Niebling, John F.
Chemistry: electrical and wave energy
Processes and products
Electrostatic field or electrical discharge
20412975, C25F 312
Patent
active
046221140
ABSTRACT:
A photoelectrochemical etching process is described for producing gratings in various semiconductors. Because this is a direct, single step process, extreme uniformity is obtained over a wide area. The procedure is particularly useful for mode reflection in distributed feedback lasers.
REFERENCES:
patent: 3706645 (1972-12-01), Lasser
patent: 4351706 (1982-09-01), Chappell et al.
patent: 4369099 (1983-01-01), Kohl et al.
patent: 4389291 (1983-06-01), Kohl et al.
patent: 4404072 (1983-09-01), Kohl et al.
patent: 4414066 (1983-11-01), Forrest et al.
patent: 4415414 (1983-11-01), Burton et al.
patent: 4482442 (1984-11-01), Kohl et al.
patent: 4482443 (1984-11-01), Bacon et al.
Tenne et al., "Appl. Phys. Lett." 37(4), 15 Aug. 1980, pp. 428-430.
H. Kogelnik et al., "Stimulated Emission in a Periodic Structure," Applied Physics Letters, 18(4) 152-154 (Feb. 1971).
T. Matsuoka et al., "CW Operation of DFB-BH GaInAsP/InP Lasers in 1.5 .mu.m Wavelength Region," Electronics Letters, 18(1) 27-28, (Feb. 1971).
S. Akiba et al., "Low-Threshold-Current Distributed-Feedback InGaAsP/InP CW Lasers," Electronics Letters, 18 77-78 (1982).
M. J. Beesley et al, "The Use of Photoresist as a Holographic Recording Medium," Applied Optics, 9 (12) 2720-2724 (Dec. 1970).
L. F. Johnson et al, "Generation of Periodic Surface Corrugations," Applied Optics, 17(8) 1165-1181 (Apr. 1978).
L. D. Westbrook et al, "High-Quality InP Surface Corrugations for 1.55 .mu.m InGaAsP DFB Lasers Fabricated Using Electron-Beam Lithography," Electronics Letters, 18(20) 863-865 (Sep. 1982).
H. L. Garvin et al, "Ion Beam Micromachining of Integrated Optics Components," Applied Optics, 12(3) 455-459 (Mar. 1973).
C. V. Shank et al, "Optical Technique for Producing 0.1-.mu.Periodic Surface Structures," Applied Physics Letters, 23(3) 154-155 (Aug. 1973).
T. Saitoh et al, "New Chemical Etching Solution for InP and GaInAsP Gratings," Electronics Letters, 18(10) 408-409 (May 1982).
D. V. Podlesnik et al, "Maskless, Chemical Etching of Submicrometer Gratings in Single-Crystalline GaAs," Applied Physics Letters, 43(12) 1083-1085 (Dec. 1983).
L. H. Lin, "Method of Characterizing Hologram-Recording Materials," Journal of the Optical Society of America, 61(2) 203-208 (Feb. 1971).
P. Besomi et al, "Enhanced Indium Phosphide Substrate Protection for Liquid Phase Epitaxy Growth of Indium-Gallium-Arsenide-Phosphide Double Heterostructure Lasers," Journal of Applied Physics, 54(2), 535-539 (Feb. 1983).
Glass Alastair M.
Kohl Paul A.
Lum Richard M.
Ostermayer, Jr. Frederick W.
AT&T Bell Laboratories
Chapman Terryence
Niebling John F.
Nilsen Walter G.
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