Process of producing a semiconductor device

Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board

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427 95, B05D 306

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046474722

ABSTRACT:
A semiconductor device which has a protective film having a high blocking capacity against contaminating ions and a high shielding effect against an external electric field. The protective film is formed on a surface of the semiconductor device. The protective film consists essentially of an amorphous or polycrystalline silicon carbide which contains at least one element selected from the group consisting of hydrogen, nitrogen, oxygen and a halogen.

REFERENCES:
patent: 3485666 (1969-12-01), Sterling et al.
patent: 4161743 (1979-07-01), Yonezawa et al.
patent: 4360822 (1982-11-01), Roger
patent: 4544423 (1985-10-01), Tsuge et al.
Official Action of German Patent Office, Dec. 16, 1985, for Pat. Appln. P 33 46 803.6-33 and English Translation.
IBM Technical Disclosure Bulletin, vol. 13, No. 12, May 1971, "Vapor Deposition With Unsaturated Hydrocarbons", R. S. Prabhu.
IBM Technical Disclosure Bulletin, vol. 18, No. 12, May 1976, "Thick Wear Resistant Coatings for Silicon Devices", Poponiak et al.

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