Process of polishing wafers

Abrading – Abrading process – Glass or stone abrading

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Details

451285, 451287, 451288, B24B 704

Patent

active

057331774

ABSTRACT:
The invention concerns a process of polishing wafers, in which a silicon wafer held on a wafer support plate rotatable under a predetermined applied pressure, is polished by mechanochemical polishing in a plurality of polishing steps with an abrasive material interposed between the wafer and a polishing pad cloth applied to a polishing surface plate moved relative to the wafer support plate at a predetermined relative speed. Quality comparable to that of wafers obtainable by a prior art three-step polishing process can be obtained with a two-step wafer polishing step comprising a primary polishing step and a final polishing step. The primary polishing step is performed by setting a high polishing pressure of 300 to 700 g/cm.sup.2 and a reference relative speed of 50 to 150 m/min., and quick increase of the relative speed to 2 to 4 times and quick reduction of the polishing pressure down to 1/2 to 1/10 are caused in a final stage of the primary polishing step. The final polishing step is performed by setting a reference polishing pressure of 100 to 400 g/cm.sup.2 and a reference relative speed of 50 to 150 m/min., and in its final stage the relative speed is quickly reduced to 1/2 to 1/5.

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patent: 5230184 (1993-07-01), Bukhman
patent: 5486265 (1996-01-01), Salugsugan
Kolenkow et al., "Chemical-Mechanical Wafer Polishing and Planarization in Batch Systems", Solid State Technology, vol. 35, No. 6, pp. 112-114 (Jun., 1992).
Abstract of Japanese Publication No. JP 72-21054.
Abstract of Japanese Publication No. JP 61-120424.
Abstract of Japanese Publication No. JP 51-77534.
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Abstract of Japanese Publication No. JP 63-267159.

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