Process of patterning photo resist layer extending over step of

Details Process of patterning photo resist layer extending over step of Process of patterning photo resist layer extending over step of

1998-03-13

1999-10-12

McPherson, John A.

Radiation imagery chemistry: process, composition, or product th

Including control feature responsive to a test or measurement

430311, 430325, G03F 700

Patent

active

059653108

ABSTRACT:
When an underlying layer with a step is covered with a photo resist layer, the photo resist layer has a thick portion and a thin portion, and the difference in thickness causes a pattern extending over the step to be deformed due to influences of a standing wave; in order to prevent a pattern of a photo resist layer extending over an underlying layer with a step, the photo resist layer is regulated in such a manner that a difference between a target thickness of the thick portion and a certain thickness at an extreme value of a critical dimension on a characteristic curve is approximately equal to a difference between a target thickness of the thin portion and the certain thickness, then the influence of the standing wave becomes equivalent between the thick portion and the thin portion, and the pattern is prevented from the deformations.

REFERENCES:
patent: 5858590 (1999-01-01), Kwon et al.
Abstract of JP 9-129534, "Forming Method of Resist Pattern", Takeuchi, May 1997.

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