Process of passivating a semiconductor device bonding pad by imm

Details Process of passivating a semiconductor device bonding pad by imm Process of passivating a semiconductor device bonding pad by imm

1992-12-29

1996-10-15

Fourson, George

Fishing, trapping, and vermin destroying

437183, 437209, 2281805, 257780, H01L 2160, H01L 21228

Patent

active

055653782

ABSTRACT:
A passive state film is formed on a surface of a bonding pad as follows: A silicon substrate 71 is immersed in solution continuously supplied with ozone. Since ozone is continuously supplied, it is possible to maintain the concentration of the dissolved ozone in the solution above a predetermined concentration. Therefore, it is possible to make the speed of formation of the passive state film higher than the speed of fusion of aluminum, which is a main constituent of the bonding pad. Accordingly, it is possible to form a passive state film with no pinholes.

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patent: 4433004 (1984-02-01), Yonezawa et al.
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patent: 4749640 (1988-06-01), Tremont et al.
patent: 4937055 (1990-06-01), Kittler et al.
patent: 4985310 (1991-01-01), Agarwala et al.

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