Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2008-07-08
2008-07-08
Rose, Kiesha L (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S758000
Reexamination Certificate
active
07397124
ABSTRACT:
A process of metal interconnects and a structure of metal interconnect produced therefrom are provided. An opening is formed in a dielectric layer. A metal layer is formed over the dielectric layer filling the opening. A film layer is formed on the metal layer and the dielectric layer. The film layer is reacted with the metal layer during a thermal process, and a protective layer is formed on the surface of the metal layer. The portion of the film layer not reacted with the metal layer is removed to avoid short between the metal layers. The protective layer can protect the surface of the metal layer from being oxidized and thus the stability and the reliability of the semiconductor device can be effectively promoted.
REFERENCES:
patent: 6689689 (2004-02-01), Besser et al.
patent: 6794755 (2004-09-01), Maiz et al.
Hu Shao-Chung
Huang Chien-Chung
Yang Yu-Ru
J.C. Patents
Rose Kiesha L
United Microelectronics Corp.
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