Process of manufacturing whisker crystalline silicon carbide

Details Process of manufacturing whisker crystalline silicon carbide Process of manufacturing whisker crystalline silicon carbide

1971-03-18

1976-01-20

Meros, Edward J.

Chemistry of inorganic compounds

Silicon or compound thereof

Binary compound

423440, C01b 3136

Patent

active

039339840

ABSTRACT:
Whisker crystalline silicon carbide is prepared by heating a silicon-containing material for example, elemental silicon, silicon oxides, silicon hydroxides, silicon salts and the like with a halogen and carbon-containing material, such as a mixture of hydrocarbon and chlorine-containing material selected from chlorine, hydrogen chloride, tetrachloromethane and phosgene and halogenated hydrocarbon at a temperature of 800.degree.C or higher under a substantial oxygen and nitrogen gas-free condition.

REFERENCES:
patent: 3306705 (1967-02-01), Leineweber et al.
patent: 3371995 (1968-03-01), Pultz
patent: 3399980 (1968-09-01), Bourdeau
patent: 3622272 (1971-11-01), Shyne et al.
patent: 3709981 (1973-01-01), Lee et al.

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