Process of manufacturing semiconductor devices

Details Process of manufacturing semiconductor devices Process of manufacturing semiconductor devices

1974-10-15

1976-02-03

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148172, 148173, 148 15, 148186, 148187, 148189, 252 623E, 252 623GA, H01L 738

Patent

active

039363287

ABSTRACT:
A cylindrical substrate of semiconductive material is repeatedly incised by a saw to be formed with many parallel grooves while it has one portion of the peripheral portion remaining uncut throughout its length. Thus, the grooves define between them many parallel wafer units integrally interconnected through the uncut portion. Then all the wafer units are simultaneously cleaned, diffused with an impurity, etched, and so on. After the completion of all the simultaneous processing operations, the wafer units are removed from the uncut portion to form separate wafers.

REFERENCES:
patent: 2727839 (1955-12-01), Sparks
patent: 3128213 (1964-04-01), Gault et al.
patent: 3152933 (1964-10-01), Reuschel
patent: 3664294 (1972-05-01), Solomon
patent: 3859148 (1975-01-01), Dawson et al.

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