Process of manufacturing semiconductor devices

Details Process of manufacturing semiconductor devices Process of manufacturing semiconductor devices

1978-04-05

1979-12-25

Tupman, W. C.

Metal working

Method of mechanical manufacture

Assembling or joining

29583, 29588, 148 15, B01J 1700

Patent

active

041797949

ABSTRACT:
On a common semiconductor wafer constituted by a PN-lamination are formed a number of semiconductor device units. Recessed grooves are formed into this wafer by an etching technique at such sites as one corresponding to the boundaries of the respective adjacent semiconductor device units. To protect the PN-junctions of the wafer exposed on the etched grooves, these surfaces are coated with a thermo-setting resin. Thereafter, the semiconductor wafer is severed apart at the respective recessed grooves into respective individual chips of semiconductor devices.

REFERENCES:
patent: 2948642 (1960-08-01), MacDonald
patent: 3535774 (1970-10-01), Baker
patent: 3742599 (1973-07-01), Desmond
patent: 3911561 (1975-10-01), Quinn
IBM Technical Bulletin, "Low Temp. Forming of SiO.sub.2 Layers," Berkenblit, p. 1297, vol. 13, No. 5, Oct. 1970.

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