Process of manufacturing a semiconductor device by filling a via

Details Process of manufacturing a semiconductor device by filling a via Process of manufacturing a semiconductor device by filling a via

1994-12-08

1996-08-06

Fourson, George

Fishing, trapping, and vermin destroying

437194, H01L 2128

Patent

active

055433570

ABSTRACT:
The present invention discloses a process for manufacturing a semiconductor device in which characteristics of an aluminum alloy film are prevented from deteriorating, when a titanium film is used as an under film and the aluminum alloy film is heated to fill a via hole therewith. Interlayered insulating film is formed on a first aluminum wire, and after the formation of a via hole which reaches the first aluminum wire, a titanium film and an aluminum alloy film are formed in turn by a sputtering process. Next, a silicon substrate is heated up to 450.degree. to 500.degree. C. to melt the aluminum alloy film, thereby filling the via hole therewith. In this case, the thickness of the titanium film is set to 10% or less of the thickness of the aluminum alloy film and at most 25 nm. In particular, in the case of the aluminum alloy film containing no silicon, the thickness of the titanium film is set to 5% or less of the thickness of the aluminum alloy film, whereby the deterioration of characteristics of the aluminum alloy film by titanium can be minimized, and the via hole can be surely filled therewith.

REFERENCES:
patent: 5266521 (1993-11-01), Lee et al.
patent: 5356836 (1994-10-01), Chen et al.
patent: 5371042 (1994-12-01), Ong
"Al-Plaph (Aluminum-Planarization by Post-Heating) Process for planarized Double CMOS Applications", C. S. Park, S. I. Lee, J. H. Park, J. H. Sohn, D. Chin, J. G. Lee, Jun. 11-12, 1991 VMIC Conference, pp. 326-328.
"Quarter, Micron Hole Filling with SiN sidewall by aluminum High temperature sputtering", M. Taguchi, K. Koyama, Y. Sugano, Jun. 9-10, 1992 VMIC Conference, pp. 219-225.

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