Process of manufacturing a semiconductor device

Details Process of manufacturing a semiconductor device Process of manufacturing a semiconductor device

2007-12-04

2007-12-04

Smith, Zandra V. (Department: 2822)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Mesa formation

C438S039000, C438S040000, C438S604000, C438S605000, C438S606000, C438S745000, C438S749000, C438S750000, C438S751000

Reexamination Certificate

active

11155474

ABSTRACT:
A process of manufacturing a semiconductor device includes the steps of forming a stacked structure of a first III-V compound semiconductor layer containing In and having a composition different from InP and a second III-V compound semiconductor layer containing In. The second III-V compound semiconductor layer is formed over the first III-V compound semiconductor layer and growing an InP layer at regions adjacent the stacked structure to form a stepped structure of InP. The process further includes the step of wet-etching the stepped structure and the second III-V compound semiconductor layer using an etchant containing hydrochloric acid and acetic acid to remove at least the second III-V compound semiconductor layer.

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