Metal working – Piezoelectric device making
Reexamination Certificate
2006-10-17
2006-10-17
Tugbang, A. Dexter (Department: 3729)
Metal working
Piezoelectric device making
C029S846000, C252S06290R, C310S340000, C310S341000, C310S358000, C427S100000
Reexamination Certificate
active
07120978
ABSTRACT:
A method of manufacturing a piezoelectric element structure having a supporting substrate and a piezoelectric film supported on the supporting substrate. A first layer, and a second layer having zirconium, each provided with a perovskite structure, are formed in that order on the supporting substrate. The two layers are formed to be in contact with each other or laminated through an intermediate layer. The temperature is set to 500° C. or more at the time of formation of the layers, and cooling is subsequently provided from the formation temperature at least to 450° C. with a cooling speed of 30° C./min or more.
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Fukui Tetsuro
Matsuda Takanori
Unno Akira
Wasa Kiyotaka
Fitzpatrick ,Cella, Harper & Scinto
Kiyotaka Wasa
Tugbang A. Dexter
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