Process of manufacturing a high-frequency vertical junction fiel

Details Process of manufacturing a high-frequency vertical junction fiel Process of manufacturing a high-frequency vertical junction fiel

1984-06-27

1986-05-06

Hearn, Brian E.

Metal working

Method of mechanical manufacture

Assembling or joining

29576B, 29578, 148 15, 357 22, H01L 2174, H01L 2980

Patent

active

045862397

ABSTRACT:
According to this process, P.sup.+ type parallel bars are implanted in a N type silicon substrate. Thereafter an oxidation above the implanted zones is carried out, then a uniform layer of polycrystalline silicon is deposited that contacts the N type silicon substrate by being directly isolated from the P.sup.+ type grid bars.
The present invention allows to manufacture particularly miniaturized vertical junction field-effect transistor structures by a simple process.

REFERENCES:
patent: 4198645 (1980-04-01), Nishizawa
patent: 4261763 (1981-04-01), Kumar et al.
patent: 4326269 (1982-04-01), Nishizawa
patent: 4381956 (1983-05-01), Lane
patent: 4403396 (1983-09-01), Stein

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