Process of manufacturing a high frequency bipolar transistor uti

Details Process of manufacturing a high frequency bipolar transistor uti Process of manufacturing a high frequency bipolar transistor uti

1984-07-06

1986-05-06

Saba, William G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29578, 29590, 29591, 148187, 148190, 148DIG19, 148DIG20, 148DIG106, 148DIG151, 156653, 156657, 357 34, 357 35, 357 71, 427 85, 427 88, H01L 21225, H01L 21283

Patent

active

045869685

ABSTRACT:
Apart from the base fingers (10), this transistor includes a titanium silicide coating, from which the base diffusions have been formed, and a silicon nitride coating (4). The edges of sandwiches made up of bands (3) and (4) are bordered by a silica bank (7) formed automatically by deposit and anisotropic attack, without additional masking. The emitter fingers (9) are overhung by a polycrystalline silicon layer (8) from which doping of these fingers has been obtained.
The possibility is also obtained, automatically and without masks alignment, of having the emitter and base fingers brought firmly together with minimum protection distances.

REFERENCES:
patent: 4322882 (1982-04-01), Vora
patent: 4381953 (1983-05-01), Ho et al.
patent: 4418468 (1983-12-01), Vora et al.
patent: 4419810 (1983-12-01), Riseman
patent: 4424101 (1984-01-01), Nowicki
patent: 4443930 (1984-04-01), Hwang et al.
patent: 4450620 (1984-05-01), Fuls et al.
patent: 4481706 (1984-11-01), Roche
patent: 4485552 (1984-12-01), Magdo et al.
patent: 4495512 (1985-01-01), Isaac et al.
IBM Technical Disclosure Bulletin, vol. 25, No. 4, pp. 1887-1889, Sep. 1982.
IBM Technical Disclosure Bulletin, vol. 23, No. 5, pp. 1917-1918, Oct. 1980.

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