Process of manufactoring an indium antimonide photodiode

Details Process of manufactoring an indium antimonide photodiode Process of manufactoring an indium antimonide photodiode

1984-11-30

1987-09-29

Hearn, Brian E.

Fishing, trapping, and vermin destroying

2504922, 437 80, 437906, H01L 2118

Patent

active

046960945

ABSTRACT:
A method for forming indium antimonide photodiodes by ionic implantation of the S.sub.34.sup.+ isotope of sulphur on a p type indium antimonide substrate. These photodiodes may be readily coupled to an N channel charge transfer device which provides multiplexing of the photodiodes and readout of the charges.

REFERENCES:
patent: 3577175 (1971-05-01), Gri et al.
patent: 3649369 (1972-03-01), Hunsperger
patent: 4286277 (1981-08-01), Longshore
Belotelov et al, "Doping of P-Type InSb with Hot Sulfur Ions (Properties of P-N Junctions)", Sov. Phys. Semicond., 17(11), Nov. 1983, pp. 1230-1232.
Korshunov et al, "Investigation of Isothermal Annealing of Indium Antimonide Irradiated with Moderate Energy Ions", Sov. Phys. Semicond. 13(4), Apr. 1979, pp. 380-381.
McNally, "Ion Implantation in InAs and InSb", Radiation Effects, 1970, vol. 6, pp. 149-153.
Korshunov, "Ellysometric Investigation of Indium Antimonide Bombarded with Moderate-Energ Ions", Sov. Phys. Semicond. 13(9), Sep. 1979, pp. 1074-1075.
Korshunov et al, "Anomalously Accelerated Diffusion of Sulfur in Implanted P-Type In Sb", Sov. Phys. Semicond. 16(8), Aug. 1982, pp. 964-965.

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