Process of making titanium nitride barrier layer

Details Process of making titanium nitride barrier layer Process of making titanium nitride barrier layer

1990-12-27

1992-12-29

Quach, T. N.

Fishing, trapping, and vermin destroying

437192, 437247, H01L 21283

Patent

active

051751267

ABSTRACT:
Two methods for substantially improving the integrity of a TiN barrier layer are disclosed. The first method allows an atmospheric anneal in a conventional semiconductor furnace. The atmospheric anneal substantially seals the exposed TiN surface preventing subsequent metal layers from migrating through the barrier layer. The second method involves a reaction within a plasma reactor using a plasma gas. The plasma gas reacts with titanium within the TiN film to form a desired titanium compound. The gas is adsorbed onto the TiN grains at the grain boundaries within the TiN film thus filling the grain boundaries and thus substantially preventing subsequent metal layers from migrating though the TiN barrier layer. The second method allows the deposition of TiN, the plasma reaction, and subsequent metal depositions to take place on the same equipment using the same evacuation cycle.

REFERENCES:
patent: 4782380 (1988-11-01), Shankar et al.
Sedgwick, T. O., Rapid Thermal Processing, MRS Symp. Proc., vol. 92, 1987, Wilson et al. ed., pp. 3-12.
Kumar, N., et al., "Failure Mechanisms . . . ", Thin Solid Films, Oct. 1988, vol. 164, pp. 417-428.
Kumar, N., et al., "Growth and Properties . . . ", Thin Solid Films, vol. 153, Oct. 1987, pp. 287-301.
Wittmer, M., "Barrier Layers . . . ", J. Vac. Sci. Technol. A 2(2), Apr.-Jun. 1984, pp. 273-279.
Ting, C. Y., et al., "The Use of Titanium . . . ", Thin Solid Films, vol. 96, 1982, pp. 327-345.
Sze, S. M., VLSI Technology, 1983, McGraw-Hill, pp. 28-29.
Kamiura, Y., et al., "Generation of Several Kinds of . . . ", J. Appl. Phys., 66(8), 15 Oct. 1989, pp. 3926-3929.
Kimerling, L. C., "Structure Properties of the Oxygen Donor", Mat. Res. Soc. Symp. Proc. vol. 59, 1986 Mat. Res. Soc., pp. 83-93.

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