Process of making thin film high efficiency solar cells

Details Process of making thin film high efficiency solar cells Process of making thin film high efficiency solar cells

1982-06-21

1983-07-12

Weisstuch, Aaron

Metal working

Method of mechanical manufacture

Assembling or joining

136261, 136262, 148 15, 148175, 357 30, H01L 3118

Patent

active

043922970

ABSTRACT:
Process of making thin film materials for high efficiency solar cells on low-cost silicon substrates. The process comprises forming a low-cost silicon substrate, forming a graded transition region on the substrate and epitaxially growing a thin gallium arsenide film on the graded transition region. The process further includes doping the thin gallium arsenide film and forming a junction therein. The graded transition region preferably is a zone refined mixture of silicon and germanium characterized by a higher percentage of germanium at the surface of the region than adjacent the substrate. The process also includes the formation of homojunctions in thin gallium arsenide films.
Solar cells made from the materials manufactured according to the process are characterized by a high conversion efficiency, improved stability and relatively low unit cost.

REFERENCES:
patent: 3935040 (1976-01-01), Mason
S. S. Lau et al., "Heteroepitaxy of Deposited Amorphous Layer By Pulsed Electron-Beam Irradiation", Appl. Phys. Lett., vol. 33, pp. 235-237, (1978).
I. Golecki et al., "Heteroepitaxy of a Deposited Amorphous Germanium Layer on a Silicon Substrate by Laser Annealing", Thin Solid Films, vol. 57, pp. L13-L15, (1979).
R. J. Stirn, "Galicon Solar Cells for High-Efficiency Low-Cost Arrays," Advanced Photovoltaic Development Group, Jet Propulsion Lab., (Aug. 1979).
"High Efficiency Thin-Film GaAs Solar Cells", Quarterly Report No. 2, SERI Contract No. XJ-903171, Jet Propulsion Lab., (Jan. 1980).
J. C. C. Fan et al., "GaAs Shallow-Homojunction Solar Cells," Cont. Record, 14th IEEE Photovoltaic Specialists Meeting, (1980), pp. 1102-1105.

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