Process of making thin film 2H .alpha.-sic by laser ablation

Details Process of making thin film 2H .alpha.-sic by laser ablation Process of making thin film 2H .alpha.-sic by laser ablation

1994-03-17

1996-06-25

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

117108, 148DIG148, H01L 2120

Patent

active

055299490

ABSTRACT:
Thin films of 2H .alpha.-silicon carbide are produced by pulsed laser ablation.

REFERENCES:
patent: 5080753 (1992-01-01), Doll et al.
Rimai et al. in Appl. Phys. Letters 59(18), Oct. 1991, pp. 2266-2268, in "Preparation of oriented Silicon Carbide films by laser ablation of ceremic silicon carbide targets".
Thin Film Deposition and Microelectronic and Optoelectronic Device Fabrication and Characterization in Monocrystalline Alpha and Beta Silicon Carbide, Robert F. Davis et al., invited paper, Proceedings of the IEEE, vol. 79, No. 5, May 1991.
Crystal Growth of 2H Silicon Carbide, J. Anthony Power, Journal of Applied of Physics, vol. 40, No. 11, pp. 4660-4662, Oct. 1969.
Growth of Thin Films by Laser-Induced Evaporation, Jeffrey T. Cheung and Haluk Sankur, CRC Critical Reviews in Solid State and Materials Sciences, vol. 15, Issue 1 (1988), pp. 64-109.
Recent development in SiC single-crystal electronics, P. A. Ivanov and V. E. Chelnokov, Semiconductor Science Technology, vol. 7, pp. 863-880, 1992.
Hetro-Expitaxial Composition: Rare polytype of silicon carbide 2H on insulating substrate of aluminium nitrade-sapphire, Translated by Gregory Adamsky, pp. 1-3.
Growth of 2H-SiC on 6H-SiC by pulsed Laser Ablation, M. A. Stan, M. O. Patton, J. D. Warner, NASA Lewis Research, Center, Cleveland, Ohio 44135, J. W. Yang and P. Pirouz, Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, Ohio 44106, pp. 1-8.
Growth, Luminescence, Selection Rules, and Lattice Sums of SiC with Wurtzite Structure, Lyle Patrick, D. R. Hamilton and W. J. Choyke, Westinghouse Research Laboratories, Pittsburgh, Pennsylvania pp. 526-536.
The Potential of Diamond and SiC Electronic Devices for Microwave and Millimeter-Wave Power Applications, Robert J. Trew, Fellow, Ieee, Jing-Bang Yan, Member, IEEE, and Philip M. Mock, Member, IEEE, pp. 598-660.
A Novel L-Coupled RF PECVD System for Large-Area Deposition of a-SiC:H for Device Applications, A. Tran, D. Fung, M. M. Rahman, and C. Y. Yang, Microelectronics Laboratory, Santa Clara University, CA 95053, USA, pp. 83-87.
Recent Progress in Epitaxial Growth of SiC, H. Matsunami, Department of Electrical Engineering, Kyoto University, Yoshidahnomachi, Sakyo, Kyoto 606, Japan, pp. 3-12.
Synthesis and erystallography of the wurtzite form of silicon carbide, By Robert F. Adamsky and Kenneth M. Merz, Research and Development Division, The Carborundum Company, Niagra Falls, New York, With 2 Figures, pp. 351-361.
Growth of Thin Films by Laser-Induced Evaporation, vol. 15, Issue 1 (1988), By: Jeffrey T. Cheung, Department of Electronic Imaging, Science Center, Rockwell International, Thousand Oaks, California and Haluk Sankur, Department of Applied Optics, Science Center, Rockwell International, Thousand Oaks, California, pp. 63-109.
Dialog Search for Process for Fabricating SiC Semiconductor Devices, Patent No. 3,956,032.

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