Process of making silicided contacts for semiconductor devices

Details Process of making silicided contacts for semiconductor devices Process of making silicided contacts for semiconductor devices

1994-05-20

1995-04-25

Quach, T. N.

Fishing, trapping, and vermin destroying

437200, 437201, 437973, 148DIG19, 148DIG147, 148DIG154, H01L 21283

Patent

active

054098530

ABSTRACT:
A contact for a semiconductor device is provided by depositing a layer of palladium on a silicon substrate, causing the palladium to react with the substrate for forming palladium silicide, removing unreacted palladium from the substrate, forming doped silicon on the palladium silicide and substrate, causing the silicon to be transported through the palladium silicide for recrystallizing on the substrate for forming epitaxially recrystallized silicon regions on the substrate and lifting the palladium silicide above the epitaxially recrystallized silicon regions for forming a silicided contact therefor, and removing the doped silicon from the substrate.

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