Metal treatment – Compositions – Heat treating
Patent
1984-11-26
1986-10-14
Roy, Upendra
Metal treatment
Compositions
Heat treating
29571, 29576B, 148187, 148DIG24, 148DIG61, 357 91, H01L 21263, H01L 21225
Patent
active
046170669
ABSTRACT:
A method for producing hyperabrupt P.+-. or N.+-. regions in a near-surface layer of a substantially defect free crystal, using solid phase epitaxy and transient annealing. The process for producing a hyperabrupt retrograde distribution of the dopant species begins with amorphizing the near-surface layer of a base crystal, and then implanting a steep retrograde distribution of the desired species into the amorphized layer, so that the retrograde distribution lies entirely within the amorphized layer, thereby avoiding channelling effects during implantation. The substantially defect-free structure of the base crystal is restored by annealing the implanted base crystal at a temperature sufficiently high to induce solid phase epitaxial regrowth on the underlying nonamorphized crystal, but at a temperature sufficiently low to avoid significant diffusion of the implanted species. The implanted species is subsequently activated by a rapid thermal annealing process, at a temperature sufficiently high to activate the implanted species, but for a very short time so that long-range diffusion does not occur. In a preferred embodiment, the implanted species is boron, BF.sub.2.sup.+, phosphorus, or arsenic in the top 0.20 micrometers of a substantially defect-free silicon base crystal, which may be in a bulk form or epitaxially deposited on an insulator substrate such as sapphire.
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Hughes Aircraft Company
Karambelas A. W.
Laslo Victor G.
Roy Upendra
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