Process of making semiconductor-on-insulator substrate

Details Process of making semiconductor-on-insulator substrate Process of making semiconductor-on-insulator substrate

1995-05-18

1997-09-23

Fourson, George

Fishing, trapping, and vermin destroying

437 86, 437966, 437974, 437170, H01L 2176

Patent

active

056704119

ABSTRACT:
A process for forming a semiconductor substrate wherein an epitaxial layer is formed on a porous layer of a first substrate, an insulating layer is formed on the epitaxial layer, the insulating layer is bonded to a second substrate and the porous layer is selectively removed.

REFERENCES:
patent: 5250960 (1993-10-01), Yamagata et al.
patent: 5374581 (1994-12-01), Ichikawa et al.
patent: 5466631 (1995-11-01), Ichikawa et al.
Kimura, M., et al, "Epitaxial Film Transfer . . . Insulating Substrate", Appl. Phys. Lett. 43(3) Aug. 1983 pp. 263-265.

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