Process of making Schottky barrier devices formed by diffusion b

Details Process of making Schottky barrier devices formed by diffusion b Process of making Schottky barrier devices formed by diffusion b

1985-07-31

1986-12-30

Ozaki, George T.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29571, 29591, 357 15, H01L 21225

Patent

active

046327134

ABSTRACT:
Increased barrier heights at metal(36)-semiconductor(32) contacts for semiconductors such as gallium arsenide by formation of an opposite doping type thin layer (34) on the semiconductor (32) surface by surface diffusion of dopants are disclosed. Preferred embodiments diffuse zinc 50 to 400 .ANG. into n type gallium arsenide (32) by rapid thermal pulses; then aluminum or titanium-platinum (36) contacts to the zinc doped layer (34) are deposited by evaporation and lift off.

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